Samsung Prepares to Introduce High-Speed HBM4 Memory in 2025

High Bandwidth Memory (HBM) technology made its debut in 2013, introduced by SK Hynix and subsequently adopted by JEDEC, the organization responsible for establishing official memory specifications.

Since then, we have witnessed significant advancements. HBM2 was released in 2016, followed by an improved version, HBM2E, in 2018. In 2020, HBM3 was introduced, with an updated version, HBM3E, arriving in 2023.

HBM memory has predominantly found its use in high-performance computing (HPC) applications, being employed by renowned companies such as Nvidia and AMD in their graphics processors.

Samsung has announced the launch of HBM4 memory, marking a significant milestone in performance enhancement. This announcement was made by Sang-Joon Hwang, Executive Vice President and Head of DRAM Product Team at Samsung.

Simultaneously, Samsung is offering HBM3E memory with data transfer speeds of up to 9.8 gigabits per second and a bandwidth of up to 1.25 terabytes per second per stack. This development finds applications in artificial intelligence and high-performance computing.

The announcements also included new technologies like Non-Conductive Film (NCF) stacking and Hybrid Copper Bonding (HCB) to improve performance and signal integrity. HBM4 memory is expected to come with a 2048-bit memory interface per stack, enhancing transfer speeds to 2 terabytes per second.

A release schedule for HBM4 in 2025 was also disclosed, with expectations of large-scale production between 2025 and 2026, making it compatible with similar offerings from Micron under the name HBMNext.

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